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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1530 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min.) *Complement to Type 2SD2337 APPLICATIONS *Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w -200 V -150 V -6 V -2 A -5 A 1.5 W 20 .cn mi e ICM Collector Current-Peak Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -45~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1530 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= IE= -5mA; IC= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -3.0 V VBE(on) Base-Emitter On Voltage IC= -50mA; VCE= -4V -1.0 V A ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1 hFE-1 DC Current Gain IC= -50mA; VCE= -4V hFE-2 DC Current Gain hFE-1 Classifications B 60-120 C 100-200 w w scs .i w IC= -0.5A; VCE= -10V .cn mi e 60 60 200 isc Websitewww.iscsemi.cn 2 |
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